High-κ Dielectric on ReS2: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al2O3
نویسندگان
چکیده
منابع مشابه
Atomic layer deposition of Al2O3 on GaSb using in situ hydrogen plasma exposure
In this report, we study the effectiveness of hydrogen plasma surface treatments for improving the electrical properties of GaSb/Al2O3 interfaces. Prior to atomic layer deposition of an Al2O3 dielectric, p-GaSb surfaces were exposed to hydrogen plasmas in situ, with varying plasma powers, exposure times, and substrate temperatures. Good electrical interfaces, as indicated by capacitance-voltage...
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Growing high-quality and uniform dielectric on black phosphorus is challenging since it is easy to react with O2 or H2O in ambient. In this work, we have directly grown Al2O3 on BP using plasma-enhanced atomic layer deposition (PEALD). The surface roughness of BP with covered Al2O3 film can reduce significantly, which is due to the removal of oxidized bubble in BP surface by oxygen plasma. It w...
متن کاملIntroduction to (plasma-enhanced) atomic layer deposition
Film growth by the atomic layer deposition (ALD) method relies on alternate pulsing of the precursor gases and vapors into a vacuum chamber and their subsequent chemisorption on the substrate surface (Fig. 1) [1,2]. The different steps in the process are saturative such that ALD film growth is self-limiting yielding one submonolayer of film per deposition cycle. ALD has some unique characterist...
متن کاملUniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition.
Regardless of the application, MoS2 requires encapsulation or passivation with a high-quality dielectric, whether as an integral aspect of the device (as with top-gated field-effect transistors (FETs)) or for protection from ambient conditions. However, the chemically inert surface of MoS2 prevents uniform growth of a dielectric film using atomic layer deposition (ALD)-the most controlled synth...
متن کاملEllipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films
We report on results on the preparation of thin (<100 nm) aluminum oxide (Al2O3) films on silicon substrates using thermal atomic layer deposition (T-ALD) and plasma enhanced atomic layer deposition (PE-ALD) in the SENTECH SI ALD LL system. The T-ALD Al2O3 layers were deposited at 200 °C, for the PE-ALD films we varied the substrate temperature range between room temperature (rt) and 200 °C. We...
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ژورنال
عنوان ژورنال: Materials
سال: 2019
ISSN: 1996-1944
DOI: 10.3390/ma12071056